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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS

Contents

(1) Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors
P.I. Baranskii, V.M. Babich, E.F. Venger

(5)Crystallochemistry of defects in lead telluride films
D.M. Freik, M.A. Ruvinskii, B.M. Ruvinskii, M.A. Galushchak

(9) Effect of surface condition on strain in semiconductor crystal sample
B.K. Serdega, E.V. Nikitenko, V.I. Prikhodenko

(12) Electronic properties of silicon surface at different oxide film conditions
S.I. Kirillova, V.E. Primachenko, E.F. Venger, V.A. Chernobai

(19) Structural investigations of annealed ZnS:Cu, Ga film phosphors
Lytvyn O.S., Khomchenko V.S., Kryshtab T.G., Lytvyn P.M., Mazin M.O., Prokopenko I.V., Rodionov V.Ye., Tzyrkunov Yu.A.

(24) Features of electrical charge transfer in porous silicon
L.S. Monastyrskii

(29) Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films
B.O. Nesterenko, Z.I. Kazantseva, O.A. Stadnyk D. De Rossi, V.I. Kalchenko

(34) Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well
A.V. Korovin

(40) Electrical properties of macroporous silicon structures
Karachevtseva L.A., Lytvynenko O.A., Malovichko E.A., Sobolev V.D., Stronska O.J.

(44) Activation of porous Si blue emission due to preanodization ion implantation
A.G. Rozhin, N.I. Klyui, V.G. Litovchenko, V.P. Melnik, B.N. Romanyuk, Yu.P. Piryatinskii

(48) Aging of ZnS:Mn thin – film electroluminescent devices grown by two different atomic-layer epitaxial processes
N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tцrnqvist K.M. Vasama

(56) Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters
B.A. Snopok, K.V. Kostyukevich, S.I. Lysenko, P.M. Lytvyn, O.S. Lytvyn, S.V. Mamykin, S.A. Zynyo, P.E. Shepelyavyj, E.F.Venger, S.A. Kostyukevich, Yu.M. Shirshov

(70) Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices
S.A. Kostyukevych, N.L. Moskalenko, P.E. Shepeliavyi, V.I. Girnyk, I.V. Tverdokhleb, A.A. Ivanovsky

Contents [28Kb pdf] Cover page [ 52Kb pdf]

 

 

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