PACS 29.40.Wk

Semiconductor sensors for dosimetry of epithermal neutrons

P. G. Litovchenko¹, R. Moss², F. Stecher-Rasmussen², K. Appelman², L. I. Barabash¹,
T. I. Kibkalo¹, V. F. Lastovetsky¹, A. P. Litovchenko¹, M. B. Pinkovska¹.

1 SC Institute for Nuclear Research of NASU, 47 prospect Nauki, 252028 Kiev, Ukraine
2 ECN, Westerduinweg 3, P. O. Box 1,1755 ZG Petten, The Netherlands

Semiconductor Physics, Quantum Electronics & Optoelectronics. 1999. V. 2, No 2. P.90-91. Eng. Il.: 1. Ref.:4

Abstract. Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due to this fact testing our p-i-n diodes under irradiation by the epithermal neutrons was carried out. The more advanced p-i-n diodes on the base of high purity silicon were used at present work, and, as a result, we have obtained considerably more sensitive sensors for more wide range of neutron doses. The sensitivity of sensors is 0.14 V/Gy for average neutron energy of 24 keV.

Keywords: dosimetry, semiconductor detectors, epithermal neutrons, silicon, converter.

Paper received 17.05.98; revised manuscript received 26.06.98; accepted for publication 12.07.98.

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