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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
(1)
On the current flow mechanism in the Au-TiBx-n-GaN-i-Al2O3 Schottky barrier
diodes
A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova,
Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet
(6)
Effect of laser radiation on catalytic properties of silicon electrodes
covered with a transition metal film and providing water decomposition
V.E. Primachenko, L.L. Fedorenko, Yu.A. Tsyrkunov, S.A. Zinio, S.I.
Kirillova, V.A. Chernobai, E.F. Venger
(10)
Electron energy spectrum in a spherical quantum dot with smooth confinement
V. Holovatsky, O. Voitsekhivska, V. Gutsul
(17)
Characteristics of the dependences of mobility and concentration of charge
carriers in monocrystals CdSb(In) after y-irradiation
A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk
(19)
Calculation of the spectra of characteristic electron losses in indium
bromide
M.O. Kolinko, O.V. Bovgyra
(23)
On the problem of relaxation for radiation-induced optical effects in
some ternary chalcogenide glasses
O.I. Shpotyuk, M.M. Vakiv, B. Butkiewicz, A.P. Kovalskiy, R.Ya. Golovchak
(28)
Local properties of impurity and defects investigated by high pressure
spectroscopy
Marek Grinberg
(30)
Information conception of image perception at solid-state lighting
V.I. Osinsky
(44)
Characteristics of diode temperature sensors which exhibit Mott conduction
in low temperature region
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts
(48)
Polarized optical transmittance spectra of nonlinear thiogallate crystals
near "isotropic point"
O.S. Kushnir, O.S. Dzendzelyuk, and V.A. Hrabovskyy
(51)
Electron, hole, and exciton spectra in a quantum wire crossing the quantum
well
Î.Ì. Makhanets, À.Ì. Gryschuk, Ì.V. Òkach
(58)
Optical investigation of the electronic structure of alloys Ñu-Få
V.V. Vovchenko, V.S. Staschuk, L.V. Poperenko, V.O. Lysiuk
(61)
Dislocations as internal sources of infrared radiation in crystals subjected
to ultrasonic influence
haracteristics of diode temperature sensors which exhibit Mott conduction
in low temperature region
R.K. Savkina, A.B. Smirnov, F.F. Sizov
(65) Obtaining and optical properties
of the glasses of the GeS2–HgS system
B.D. Nechyporuk, I.D. Olekseyuk, V.O. Yukhymchuk, V.V. Filonenko, I.I.
Mazurets, O.V. Parasyuk
(70)
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky
(75) Effect of the microwave radiation treatment of porous indium phosphide
on spectra of radiative recombination centers
R. Red'ko, S. Red'ko
(77)Compensation
of hole conductivity in CdTe crystals doped with Cr
E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko,
I.M. Yuriychuk
(80)
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond
pulse laser irradiation
D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko
(84) Dielectric characteristics of GaSe
nanocrystals intercalated with hydrogen
V.M. Kaminskii, Z.D. Kovalyuk, V.V. Netyaga, and V.B. Boledzyuk
(87) Thermofield Cr->Cr2+ recharging
resulting in anomalous intensification of Cr2+ emission in ZnS:Cr thin-film
electroluminescent structures
N.A. Vlasenko, P.F. Oleksenko, Z.L. Denisova, M.A. Mukhlyo, L.I. Veligura
(91) Estimation on frequency characteristics
of a photodiode determined by the motion of charge carriers in the region
of volume charge on the surface generation of carriers
A.I. Danilyuk, Yu.G. Dobrovolskiy
(95) Calculation of Fermi
level location and point defect ensemble in CdTe single crystal and thin
films
V.V. Kosyak, A.S. Opanasyuk
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