PACS: 85.60.D, 07.57.K, 85.60.G, 73.40 Noise spectra and dark current investigations in n+-p-type Hg1-xCdxTe (x ~0.22) photodiodes Z.F. Ivasiv, F.F. Sizov, V.V. Tetyorkin Semiconductor Physics, Quantum Electronics and Optoelectronics - 1999. - 2, ¹3. - P.21-25. - Engl. Il.: 4. Ref.: 16. Abstract. The dark current and noise spectra were investigated in Hg1-xCdxTe (x~0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to be correlated with tunneling current via the deep defect states in the gap at low reverse biases U£0.1 V. In the photodiodes, where the tunneling current is found to be dominating, the 1/f noise is observed up to frequencies 104 Hz. The decrease of tunneling current results in the decrease of 1/f noise. Keywords: long wavelength intra-red photodiode, trap assisted tunneling, 1/f noise. [Contents] |