Semiconductor Physics, Quantum Electronics & Optoelectronics. 2002. V. 5, N 4. P. 343-346.

PACS: 78.55.Et, 78.66.Hf, 68.66.Hb

High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix
V.V. Strelchuk1, M.Ya. Valakh1, M.V. Vuychik1, S.V. Ivanov2, P.S. Kop'ev2, T.V. Shubina2

1Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
2Ioffe Physico-Technical Institute, RAS, 194021 St.-Petersburg, Russia
Phone: +38(044) 265 8550; fax: +38(044) 265 8342, e-mail: valakh@isp.kiev.ua

Abstract. The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic character up-converted photoluminescence signal from CdSe quantum dots. Up-conversion photoluminescence mechanism was interpreted on the basis of a non-linear process of two-step two-photon absorption through deep defect states including cation vacancies localized at the interface of quantum dots. This observation of photoluminescence up-conversion demonstrates the influence of quantum dot environment on its properties.

Keywords: CdSe quantum dots, up-conversion photoluminescence
Paper received 25.10.02; accepted for publication 17.12.02.

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