Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003. V. 6, N 4. P. 444-449.
High-temperature injection spectroscopy
of deep traps in CdTe polycrystalline films
Sumy State University, 2, Rymskyi-Korsakov str., 40007 Sumy, Ukraine
Abstract. The paper provides the direct experimental method to determine the localized state
energy distribution function for semiconducting solid materials based on space-charge-limited
current-voltage characteristics. The current-voltage characteristics would be obtained
under the random temperatures. The Tikhonov regularization method was used to solve the
Fredholm 1st rank equation. The method developed in this research was used for the study of
deep traps in CdTe polycrystalline films obtained in quasi-closed-tube on the conducting
substrate. In the bend gap of the material, some traps were traced, which can be described by
the close to Gaussian distribution parameters as well as by the parameter of energy disorder
= 0.015-0.04 eV. The research shows that the trap concentration and depend on the physical
and technological conditions of the obtained films, while the energy of the traps depends on
the impurity-defective material structure.
Keywords: CdTe polycrystalline films, space-charge-limited currents, deep traps.