International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
Contents
(425) Stress-induced effects in light scattering by
plasmons in p-type germanium
V.N. Poroshin, A.V. Gaydar,
A.A. Abramov, V.N. Tulupenko
(431) The microdefects classification in
semiconducting silicon
V.I. Talanin, I.E. Talanin
(437) Metastable interstitials in CdSe
and CdS crystals
L.V. Borkovska, B.M. Bulakh,
L.Yu. Khomenkova, N.O. Korsunska,
I.V. Markevich
(441) On the origin of the 300 K near-band-edge
luminescence in CdTe
K.D. Glinchuk, N.M. Litovchenko,
O.N. Strilchuk
(444) High-temperature injection spectroscopy
of deep traps in CdTe polycrystal films
A.S. Opanasyuk, N.N. Opanasyuk,
N.V. Tirkusova
(450) Acoustoelectric transient spectroscopy
of microwave treated GaAs-based structures
O.Ya. Olikh
(454) Atomic defects and physical-chemical properties
of PbTe-InTe solid solutions
D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka
(458) Mechanisms of forward current transport
in p-GaSe-n-InSe heterojunctions
Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk
(461) Unipolar injection currents in Bi4Ge3O12 crystals
T.M. Bochkova, S.N. Plyaka,
G.Ch. Sokolyanskii
(465) Thermally stimulated luminescence studies of
undoped and doped CaB4O7 compounds
J. Manam, S.K. Sharma
(471) Effect of microwave electromagnetic radiation on
the structure, photoluminescence and electronic
properties of nanocrystalline silicon films on
silicon substrate
E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova,
R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn,
E.G. Manoilov, V.E. Primachenko,
I.V. Prokopenko
(479) Structural changes in the multilayer systems
containing InxGa1–xAs1–yNy quantum wells
I.M. Fodchuk, V.B. Gevyk, O.G. Gimchinsky,
E.N. Kislovskii, O.P. Kroytor, V.B. Molodkin,
S.I. Olihovskii, E.M. Pavelescu, M. Pessa
(487) A fresh approach to interpretation of visible
photoluminescence spectra in silicon
nanostructures
A.V. Sachenko, Yu.V. Kryuchenko,
E.G. Manoilov, E.B. Kaganovich
(492) Structure and luminescence study of nanoporous
silicon layers with high internal surface
V.A. Makara, M.M. Melnichenko,
K.V. Svezhentsova, L.Yu. Khomenkova,
O.M. Shmyryeva
(496) Optical properties of ZnO aggregates
in KBr matrix
M. Samah, M. Bouguerra,
H. Khelfane
(499) Study of gamma field induced degradation of
green GaP light diode electroluminescence
characteristics
S.O. Kanevsky, P.G. Litovchenko,
V.Ja. Opilat, V.P. Tartachnyk,
M.B. Pinkovs’ka, O.P. Shakhov,
V.M. Shapar
(505) Polymer films as a sensitive coating for quartz
crystal microbalance sensors array
I.A. Koshets, Z.I. Kazantseva,
Yu. M. Shirshov
(508) Modeling high performance multilayer antireflection
coatings for visible and infrared (3–5
m)
substrates
M.H. Asghar, M.B. Khan,
S. Naseem
(514) Influence of elastic deformation on a residual
ellipticity of polished optical materials
V.P. Maslov, A.Z. Sarsembaeva, F.F. Sizov
(517) Distortion compensation technique for high
resolution microscopy
V.N. Borovytsky
(520) The study of the lifetime of ZnS-based
luminescent films by using the devices
of LMS series
K. Popovych, Yu. Nakonechny, I. Rubish,
V. Gerasimov, G. Leising
(524) Dual model describing effects of evaporated metal
gate on low-k dielectric methylsilsesquioxane in
metal oxide semiconductor capacitor structure
K.C. Aw, K. Ibrahim
(528) Vacuum method for creation of liquid crystal
orienting microrelief
Yu. Kolomzarov, P. Oleksenko, V. Sorokin,
P. Tytarenko, R. Zelinskyy
Contents [57 Kb pdf]
-
-
| About ISP | | Structure | | Journals | | Books | | About SPIE/Ukraine |