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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
(1)
Unstable mixing regions in II-VI quaternary solid solutions
V.G. Deibuk, S.G. Dremlyuzhenko, S.E. Ostapov
(5)
Zn and Mn impurity effect on electron and luminescent properties of porous
silicon
V.E. Primachenko, S.I. Kirillova, E.G. Manoilov, I.M. Kizyak, B.M.
Bulakh, V.A. Chernobai, E.F. Venger
(14)
Some physical properties of Si1-xGex
solid solutions using pseudo-alloy atom model
A.R. Jivani, H.J. Trivedi, P.N. Gajjar, A.R. Jani
(18)
Magnetic field effect on the binding energy of a hydrogenic impurity in
GaAs-Ga1-xAlxAs superlattice
D. Abouelaoualim
(22)
Investigation of growing the Hg1-x-y-zAxByCzTe
solid solutions by modified zone melting method
I.N. Gorbatyuk, V.V. Zhikharevich, S.E. Ostapov
(26)
Interband optical transitions in spherical nanoheterostructures
V.I. Boichuk, I.V. Bilynskyi, I.O. Shakleina
(33)
p-n junctions obtained in (Ge2)x(GaAs)1-x
varizone solid solutions by liquid phase epitaxy
B. Sapaev, A.S. Saidov, I.B. Sapaev
(35)
The structure of glassy HgS–GeS2
V.V. Halyan, H.Ye. Davydyuk, O.V. Parasyuk, A.H. Kevshyn
(38)
Electron states at the Si–SiO2 boundary (Review)
V.E. Primachenko, S.I. Kirillova, V.A. Chernobai, E.F. Venger
(55)
Investigation of cadmium telluride films on silicon substrate
V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk
(60)
Nonparabolicity effects on electron-confined LO-phonon scattering rates
in
GaAs-Al0.45 Ga0. 55As superlattice
D. Abouelaoualim
(65)
Novel technological possibilities for growth of GaAs autoepitaxial films,
and properties of Gunn diodes made on their basis
A.E. Belyaev, A.V. Bobyl, N.S. Boltovets, V.N. Ivanov, R.V. Konakova,
S.G. Konnikov, Ya.Ya. Kudryk, E.P. Markovskiy, V.V. Milenin, E.M. Rudenko,
G.F. Tereschenko, V.P. Ulin, V.M. Ustinov, G.E. Tsirlin, A.P. Shpak
(72)
Influence of polarization azimuth on twophoton absorption in CdS
N.R. Kulish, M.P. Lisitsa, N.I. Malysh
(74)
LC acousto-optical transducer for nondestructive holographic control systems
P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
(80)
Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn)
films in inhomogeneous electrical field
Z. Kazantseva, V. Kislyuk, I. Kozyarevych, V. Lozovski, O. Tretyak
(85)
Electron properties of semiconductor surface studied by the electroreflectance
spectroscopy method
P.A. Gentsar, A.I. Vlasenko, A.A. Kudryavtsev
(91)
Analysis of fractal radiation patterns from concentric-ring hexagonal
arrays
A. Boualleg, N. Merabtine, M. Benslama
(95)
Porous nanostructured InP: technology, properties, application
I. N. Arsentyev, A.B. Bobyl, S.G. Konnikov, I.S. Tarasov, V.P Ulin,
M.V. Shishkov, N.S. Boltovets, V.N. Ivanov, A.E. Belyaev, R.V. Konakova,
Ya.Ya. Kudryk, A.B. Kamalov, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin,
R.A. Red’ko
(105)
New technological possibilities to prepare InP epitaxial layers, as well
as ohmic and barrier contacts to them, and the properties of microwave
diodes made on their basis
I.N. Arsentyev, A.V. Bobyl, I.S. Tarasov, M.V. Shishkov, N.S. Boltovets,
V.N. Ivanov, A.E. Belyaev, A.B. Kamalov, R.V. Konakova, Ya.Ya. Kudryk,
O.S. Lytvyn, P.M. Lytvyn, E.P. Markovskiy, V.V. Milenin
(115)
Polymorphism in chalcogenides of alkalineearth metals
V.À. Drozdov, V.V. Pozhivatenko, Ì.À. Drozdov, V.V. Kovalchuk, L.M.
Moiseev, V.O. Moiseeva
(118)
Optical properties of p-type porous GaAs
V.V. Kidalov, L. Beji, G.A. Sukach
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