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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
Contents
(315-320)
Local plasmons contribution into photocurrent of Au/GaAs surface barrier
structure with Au nanoparticles on interface
S. Mamykin, N. Dmitruk, A. Korovin, D. Naumenko, A. Dmytruk, Yeon-Su
Park
(321-323)
Synthesis and luminescent properties of SrTiO3:Pr3+ phosphors prepared
by sol-gel method
O.M. Marchylo, L.V. Zavjalova, Y. Nakanishi, H. Kominami, K. Hara,
A.E. Belyaev, G.S. Svechnikov, L.I. Fenenko, V.I. Poludin
(324-327)
On methodology of measuring parameters with the increased sensitivity
to residual or irradiation induced inhomogeneities in semiconductors
G.P. Gaidar
(328-338)
Comparison of electron transport in polar materials for the models of
low-density and high-density electron gas. Application to bulk GaN
V.V. Korotyeyev, G.I. Syngayivska, V.A. Kochelap and A.A. Klimov
(339-342)
A new method of extraction of a p-n diode series resistance from I-V characteristics
and its application to analysis of low-temperature conduction of the diode
base
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts
(343-348)
The Rahman-Nat diffraction on a thin laser-induced grating of the refractive
index in semiconductors
O.Yu. Semchuk, Î.². Gichan, L.G. Grechko
(349-356)
Electron-electron drag in crystals with a multi-valley band. Magnetoresistivity
and Hall-effect
I.I. Boiko
(357-361)
Influence of electron irradiation on spectra of light electroreflection
from the surface of Ge/Ge1-xSix heterostructure
Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A.
Ibrahimova, Heyder Mehdevi
(362-365)
Stimulated emission of Cr2+ ions in ZnS:Cr thin-film electroluminescent
structures
N.A. Vlasenko, P.F. Oleksenko, M.A. Mukhlyo, L.I. Veligura, and Z.L.
Denisova
(366-369)
Influence of polarization of semiconductor lattice on its optical vibration
spectrum
V.S. Severin
(370-374)
Fine structure of NQR spectra in GaSe
Z.D. Kovalyuk, G.I. Lastivka, Î.G. Khandozhko
(375-378)
Influence of ultrasound treatment and dynamic (in-situ) ultrasound loading
on the temperature hysteresis of electrophysical characteristics in irradiated
n-Si-Fz
V.Ì. Babych, Ja.Ì. Olikh, M.D. Tymochko
(379-390)
Investigation of singularities inherent to Mueller matrix images of biological
crystals: diagnostics of their birefringent structure
I.Z.Misevitch, Yu.O. Ushenko, O.G. Pridiy, A.V.Motrich, Yu.Ya. Tomka,
O.V. Dubolazov
(391-398)
Wavelet analysis for Mueller matrix images of biological crystal networks
Yu.O. Ushenko, Yu.Ya. Tomka, O.G. Pridiy, A.V.Motrich, O.V. Dubolazov,
I.Z. Misevitch, V.V. Istratiy
(399-402)
Analysis of properties of optical carriers after long-term storage
V.V. Petrov, A.A. Kryuchin, I.V. Gorbov, I.O. Kossko, S.O. Kostyukevych
(403-405)
Photothermal analysis of heterogeneous semiconductor structures under
a pulse laser irradiation
Roman Burbelo, Mykola Isaiev, Andrey Kuzmich
(406-411)
Thin silicon solar cells with SiÎõ /SiNx Bragg mirror rear surface reflector
I.I. Ivanov, T.V. Nychyporuk, V.A. Skryshevsky, M. Lemiti
(412-416)
Thermodynamics analysis of defects created processes in the crystals of
cadmium telluride in the conditions of high temperature annealing
V.V. Prokopiv, P.M. Fochuk, I.V. Gorichok, E.V. Vergak
(417-420)
Two-dimensional modeling the static parameters for a submicron field-effect
transistor
M. Zaabat, M. Draid
(421-423)
Stacking Faults in the single crystals
Mihir M. Vora and Aditya M. Vora
(424-428)
Approaching to an optimal value of rise time in n-well/p substrate photodiode
by controlling depletion layer width
Emad Hameed Hussein
(429-437)
Author Index 2009 (Volume 12)
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