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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
(1)
Local atomic structures in Si1-xGex
and Si1-xSnx
random solid solutions
V.G. Deibuk, Yu.G. Korolyuk
(6)
Spin ballistic transport and quantum intreference in mesoscopic
loop structures
I. Tralle , W. Pasko
(19)
Application of method of projective representations for TO analysis of
exciton-phonon transitions in enantiomorphous tetragonal crystals ZnP2
and CdP2
S.V. Koryakov, V.O. Gubanov, M.M. Biliy,
O.V. Slobodyanyuk, Z.Z. Yanchuk
(25)
Momentum r elaxation of h ot e lectrons d uring r adiative i ntraband
i ndirect t ransitions in ZnS:Cr
N.A. Vlasenko, A.E. Belyaev, Z.L. Denisova,
Ya.F. Kononets , A.V. Komarov, L.I. Veligura
(30)
Investigation of the physical properties of multi-component solid solutions
Hg1-x-y-zAxByCzTe
S.E. Ostapov, I.N. Gorbatyuk, V.V. Zhikharevich
(36)
Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs
structures with quantum wires: X-ray diffractometry study
V.V. Strelchuk, V.P. Kladko, O.M. Yefanov,
O.F. Kolomys, O.I. Gudymenko, M.Ya. Valakh
(46)
Investigation of e lectrical c haracteristics of h eteroepitaxial s tructures
as a f unction of m icrorelief and m anufacturing t echnology f eatures
N.L. Dmitruk, A.V. Karimov, R.V. Konakova,
Ya.Ya. Kudryk, A.V. Sachenko
(53)
Effect of internal electrical field on compositional dependence of p-n
junction depth in ion milled p-CdxHg1-x
Te
I.I. Izhnin, V.V. Bogoboyashchyy , K.R. Kurbanov,
K.D. Mynbaev, V.M. Ryabikov
(60)
The nature of red emission in porous silicon
L.Yu. Khomenkova, N.E. Korsunska, B.M. Bulakh, M.K.
Sheinkman, T.R. Stara
(64)
Theory of two-dimensional photonic crystals with lamellar cylindrical
pores
A.E. Glushko, E.Ya. Glushko, L.A. Karachevtseva
(72)
Experimental study and theoretical analysis of photoelectric characteristics
of AlxGa1-xAs–p-GaAs–n-GaAs-based
photoconverters with relief interfaces
N.L. Dmitruk, O.Yu. Borkovskaya, V.E. Kostylyov,
A.V. Sachenko, I.O. Sokolovskiy
(79)
Photoconverters with microrelief p-n-junction on a basis of p AlxGa1-x-p
GaAs-n GaAs-n + GaAs heterojunction
A.V. Karimov, D.M. Yodgorova
(83)
Silicon photodiode and preamplifier operation characteristic properties
under background radiation conditions
V.M. Hodovaniouk, I.V. Doktorovych, V.K.
Butenko, V.H. Yuryev, Yu.G. Dobrovolsky
(87)
Synthesis of highly doped Nd:YAG powder by the sol - gel method
J. B . Hasani, M. F. Farmahini, F. Hajiesmaeilbaigi
(90) Modification of electroluminescence
and charge trapping in germanium implanted metal-oxide-silicon light-emitting
diodes with plasma treatment
A.N. Nazarov, W. Skorupa, Ja.N. Vovk, I.N. Osiyuk,
A.S. Tkachenko, I.P. Tyagulskii, V.S. Lysenko, T. Gebel, L. Rebohle, R.A.
Yankov, T.M. Nazarova
(95)
Novel SnO2
based optical sensor for detectin g the low ammonia concentration in water
at room temperatures
M. Pisco, M. Consales, R. Viter, V. Smyntyna, S. Campopiano,
M. Giordano, A. Cusano, A. Cutolo
(100)
Quadric hologram-based self-conjugation of vortex beams
P.V. Polyanskii, Ch.V. Felde
(106)
Filter for TV and video cameras
L.I. Berezhinsky, Dae- Yong Park , Chang-Min
Sung, Kwang-Ho Kwon, S ang - Hoon Chai
(110)
Growing the high-resistive Cd1-xZnx
Te single crystals from a vapor phase
P. Feychuk, O. Kopyl, I. Pavlovich, L. Shcherbak
(114)
Review of monograph "Photoconverters with AlGaAs/GaAs Heterojunction
on Textured GaAs Substrates (Physico-Technological aspects)" (Fan
Publishers, Tashkent, 2004)
by A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V.
Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova
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