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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
Contents
(1-7)
X-ray diffraction study of deformation state in InGaN/GaN multilayered
structures
V.P. Klad'ko, A.V. Kuchuk, N.V. Safryuk, V.F. Machulin, A.E. Belyaev,
R.V. Konakova, B.S. Yavich
(8-11)
The features of temperature dependence of contact resistivity of Au Ti
Pd2Si p+-Si ohmic contacts
A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, R.V. Konakova, V.P.
Kladko, Ya.Ya. Kudryk, A.V. Kuchuk, O.S. Lytvyn, V.V. Milenin, T.V. Korostinskaya,
A.B. Ataubaeva, P.V. Nevolin
(12-18)
Electrical properties of semiconductor structures with Si nanoclusters
in SiO2 grown
by high temperature annealing technology of SiOX layer, X<2
S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M.
Khacevich, O.V. Tretyak, A.G. Shkavro
(19-23)
ITO layers modified in glow discharge plasma for Nematic Liquid Crystal
alignment
Yu. Kolomzarov, P. Oleksenko, A. Rybalochka, V. Sorokin, P. Tytarenko,
R. Zelinskyy
(24-29)
Silicon carbide defects and luminescence centers in current heated 6H-SiC
S.W. Lee, S.I. Vlaskina, V.I. Vlaskin, I.V. Zaharchenko, V.A. Gubanov,
G.N. Mishinova, G.S. Svechnikov, V.E. Rodionov, S.A. Podlasov
(30-35)
Radiative recombination in initial and electron-irradiated GaP crystals
O. Hontaruk, O. Konoreva, P. Litovchenko, V. Manzhara, V. Opilat, M.
Pinkovska, V. Tartachnyk
(36-42)
Ultrasonic assisted nanomanipulations with atomic force microscope
P.M. Lytvyn, O.Ya. Olikh, O.S. Lytvyn, O.M. Dyachyns'ka, I.V. Prokopenko
(43-50)
Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by
pulsed magnetic resonance methods
D. V. Savchenko, A. Poppl, E. N. Kalabukhova, E. F. Venger, M. P. Gadzira,
G. G. Gnesin
(51-57)
Electron-hole Fermi liquid in nanosized semiconductor structures
V.G. Litovchenko, A.A. Grygoriev
(58-60)
Photoluminescent properties of crystalline solid solution Zn1-xMgxSe:Cr2+,
a new active material for tunable IR lasers
N.O. Kovalenko, Yu.A. Zagoruiko, O.O. Fedorenko, E.A. Kuzminov
(61-64)
Li-Bi-Se semiconductor thin films: technology, structure and electrophysical
properties
V.I. Bilozertseva, H.M. Khlyap, P.S. Shkumbatyuk, N.L. Dyakonenko,
A.O. Mamaluy, D.O. Gaman
(65-69)
Surface defects determining by the wave front scanner
N.S. Goloborodko, V.I. Grygoruk, V.N. Kurashov, D.V. Podanchuk, A.A.
Goloborodko, M.M. Kotov
(70-73)
Optical transmittance of carbon suspensions in polymer matrixes under
powerful pulsed laser irradiation
S.E. Zelensky, O.V. Kopyshinsky, V.V. Garashchenko, A.S. Kolesnik,
V.M. Stadnytskyi, K.S. Zelenska, Ye .V. Shynkarenko
(74-78)
Genesis of initial defects in the process of monocrystalline silicon oxidation
with subsequent scribing
V.A. Smyntyna and O.V. Sviridova
(79-83)
Acoustic emission and fluctuations of electroluminescence intensity in
light-emitting heterostructures
V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk
(84-86)
Compact laser probe for surface acoustic waves
V.V. Semenov, I.V. Blonskyi, V.G. Gryts'
(87-90)
Changes in the state of paramagnetic centers and lattice parameter of
micro-structured Si under the influence of weak magnetic field
V.V. Trachevsky, L.P. Steblenko, P.Y. Demchenko, O.V. Koplak, A.M.
Kuryliuk, A.K. Melnik
(91-94)
Influence of Cr doping on optical and photoluminescent properties of CdTe
Ì.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytskiy, V.V. Brus, N.D. Vakhnyak
(95-97)
Spin-dependent current in silicon p-n junction diodes
O.V. Tretyak, O.I. Kozonushchenko, K.V. Krivokhizha, A.S. Revenko
(98-102)
Two-dimensional digital demodulation for optical microscopes with spatial
modulation of illumination
V.N.
Borovytsky
(103-109)
Two-dimensional digital demodulation for optical microscopes with spatial
modulation of illumination
V.O. Lysiuk, N.L. Moskalenko, V.S. Staschuk, M.I. Kluy, O.V. Vakulenko,
I.G. Androsyuk, M.A. Surmach, V.I.Pogoda
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