| Volume 13 (2010) | Author Index (pdf ...K) | |
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International Scientific Journal
Contents Volume 13 N 1 (1-7)
X-ray diffraction study of deformation state in InGaN/GaN multilayered
structures (8-11)
The features of temperature dependence of contact resistivity of Au Ti
Pd2Si p+-Si ohmic contacts (12-18)
Electrical properties of semiconductor structures with Si nanoclusters
in SiO2 grown (19-23)
ITO layers modified in glow discharge plasma for Nematic Liquid Crystal
alignment (24-29)
Silicon carbide defects and luminescence centers in current heated 6H-SiC (30-35)
Radiative recombination in initial and electron-irradiated GaP crystals (36-42)
Ultrasonic assisted nanomanipulations with atomic force microscope (43-50)
Intrinsic defects in nonstoichiometric b-SiC nanoparticles studied by
pulsed magnetic resonance methods (51-57)
Electron-hole Fermi liquid in nanosized semiconductor structures (58-60)
Photoluminescent properties of crystalline solid solution Zn1-xMgxSe:Cr2+,
a new active material for tunable IR lasers (61-64)
Li-Bi-Se semiconductor thin films: technology, structure
and electrophysical properties (65-69)
Surface defects determining by the wave front scanner (70-73)
Optical transmittance of carbon suspensions in polymer matrixes
under powerful pulsed laser irradiation (74-78)
Genesis of initial defects in the process of monocrystalline
silicon oxidation with subsequent scribing (79-83)
Acoustic emission and fluctuations of electroluminescence
intensity in light-emitting heterostructures (84-86)
Compact laser probe for surface acoustic waves (87-00)
Changes in the state of paramagnetic centers and lattice parameter of
micro-structured Si under the influence of weak magnetic field (00-00)
Influence of Cr doping on optical and photoluminescent properties
of CdTe (00-00)
Spin-dependent current in silicon p-n junction diodes
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