|
[#1]
[#2]
[#3]
[#4]
International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
(1)
Excitons and trions in spherical semiconductor quantum dots
I.M. Kupchak, Yu.V. Kryuchenko, D.V. Korbutyak
(9)
Effect of chemical and radiofrequency plasma treatment on photoluminescence
of SiOx films
I.Z. Indutnyy, V.S. Lysenko, I.Yu.
Maidanchuk, V.I.Min'ko, A.N. Nazarov, A.S. Tkachenko, P.E. Shepeliavyi,
V.A. Dan'ko
(14)
Modelling of pyroelectric response in inhomogeneous ferroelectric-semiconductor
films
A.N. Morozovska, E.A. Eliseev, D. Remiens, C. Soyer
(22)
Diamond microcrystallites formation through the phase transition graphite
- liquid - diamond
T.V. Semikina
(29)
Investigation of the effective mass of electrons in solid solutions Hg1-x-y-zAxByCzTe
S.E. Ostapov, V.V. Zhikharevich, V.G. Deibuk
(32)
Photoresponse in Ge/Si nanostructures with quantum dots
A.S. Nikolenko, S.V. Kondratenko, O.V. Vakulenko
(36)
Solid state doping of CdxHg1-xTe epitaxial layers with elements of V group
A.P. Vlasov, A.Yu. Bonchyk, I.M. Fodchuk, R.A. Zaplitnyy, A. Barcz,
Z.T. Swiatek
(43)
An analytical accumulation mode SOI pMOSFET model for high-temperature
analog applications
Yu. Houk, B. Iniguez, D. Flandre, A. Nazarov
(55)
Determination of parameters of cadmium telluride films on silicon by the
methods of main angle and multiangular ellipsometry
V.A. Odarych, A.Z. Sarsembaeva, F.F. Sizov, M.V. Vuichyk
(63)
New fast-relaxed liquid crystal materials for optical communication networks
Yu. Garbovskiy, A. Sadovenko, A. Koval'chuk, G. Klimusheva, S. Bugaychuk
(68)
Simulation of radiation characteristics of pulse X-ray devices for non-destructive
testing the semiconductor materials
S.V. Denbnovetsky, N.V. Slobodyan
(73)
Absorption and photoluminescent spectra of dimethylaniline ethylene ketone
dyes in isotropic solvents
M.P. Gorishnyi, A.F. Shevchuk, V.S. Manzhara, A.V. Koval'chuk, T.N.
Koval'chuk
(79)
Dynamic electrophysical characterization of porous silicon humidity sensing
S. Bravina, N. Morozovsky, R. Boukroub
(84)
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
S.V. Shutov, Ye.A. Baganov
(88)
Noise induced re-entrant transitions in exciton bistable system
Yu. Gudyma, B. Ivans'kii, O. Semenko
(93)
Electric field and carrier concentration distributions in the semiconductor
under photorefractive Gunn effect
P.M. Gorley, P.P. Horley, S.M. Chupyra
(97)
Microwave irradiation of gallium arsenide
R. Red'ko
-
-
-
-
-
|