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International Scientific Journal
SEMICONDUCTOR PHYSICS, QUANTUM ELECTRONICS
AND OPTOELECTRONICS
Contents
(105-109)
Effect of acetone vapor treatment on photoluminescence of porous nc-SiSiOx
nanostructures
I.Z. Indutnyi, K.V.Michailovska, V.I. Min'ko, P.E.Shepeliavyi
(110-115)
Influence of initial defects on defect formation process in ion doped
silicon
V.A. Smyntyna, O.V. Sviridova
(116-124)
Domain structure formation by using Scanning Probe Microscopy: equilibrium
polarization distribution and effective piezoelectric response calculations
A.N. Morozovska, G.S. Svechnikov, E.I. Shishkin, V.Y. Shur
(125-128)
Chemical treatment of monocrystalline cadmium telluride and Cd1-xMnxTe
solid solutions by Í2Î2-Ͳ-citric acid etchant compositions
R.O. Denysyuk, V.M. Tomashik, Z.F. Tomashik, O.S. Chernyuk, V.I. Grytsiv
(129-134)
The features of surface plasmon resonance in gold cluster films
L.S. Maksimenko, I.E. Matyash, S.P. Rudenko, B.K. Serdega
(135-137)
Electrophysical properties of SmxPb1-xTe solid solutions
H.A. Hasanov
(138-142)
Glass formation region and X-ray analysis of the glassy alloys in AgGaSe2+GeS2
AgGaS2+GeSe2 system
V.V. Halyan, M.V. Shevchuk, G.Ye. Davydyuk, S.V. Voronyuk, A.H. Kevshyn,
V.V. Bulatetsky
(143-146)
Perspective of surface modification of CdTe single crystal substrate for
creation photosensitive barrier structures
Makhniy V.P., Skrypnyk N.V., Boyko Yu.N.
(147-154)
Properties of phase-shifting devices, intended for research of nonlinear
absorption
M.R. Kulish, N.I. Malish
(155-161)
Hydrogenic impurity in a two-layer spherical quantum dot
V.I. Boichuk, I.V. Bilynskyi, R.Ya. Leshko
(162-164)
Determination of refractive index dispersion and thickness of thin antireflection
films TiO2 and Si3N4 on siliceous photoelectric transducers surface in
transducer production process
V. V. Donets, L.J. Melnichenko, I. A. Shajkevich, O.V. Lomakina
(165-169)
Photoluminescent properties of Al2O3 films containing gold nanoparticles
E.B. Kaganovich, I.M. Kizjak, A.A. Kudryavtsev, E.G. Manoilov
(170-172)
Adaptive cross-correlation detector for signals optoelectronic reflective
sensors
O.I. Bilyy, R.Y. Yaremyk, S.O. Kostyukevych, K.V. Kostyukevych
(173-177)
Reliability of AC thick-film electroluminescent lamps
V. Vlaskin, S. Vlaskina, L. Berezhinsky, G. Svyechnikov
(178-186)
Data acquisition, parameter extraction and characterization of active
components using integrated instrumentation system
H. Bourdoucen and A. Zitouni
(187-198)
Influence of two-photon absorption on polarization of light traveling
in uniaxial crystals
M.R. Kulish, M.P. Lisitsa, N.I. Malysh
(199-203)
Matrix model of inhomogeneous medium with circular birefringence in single
scattering case
S.N. Savenkov, Ye.A. Oberemok, V.V. Yakubchak, Î.I. Barchuk
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